ADI HMC903

6 ГГц ~ 18 ГГц16 дБм19 дБ1,6 дБ3.5V

Overview

GENERAL DESCRIPTION  The HMC903 is a gallium arsenide(GaAs), pseudomorphic high electron mobility transistor(pHEMT), monolithic microwave integrated circuit(MMIC), low noise amplifier(LNA), which is self biased with the optional bias control for Ino reduction. The device operates between 6 GHz and 18 GHz. This LNA provides 19dB of small signal gain,1.6 dB noise figure, and an outputthird-order intercept(IP3) of 27 dBm, requiring only 90 mA of supply current from a 3.5 V supply. The output power for a 1 dB compression(P1dB) of 16 dBm enables the LNA to function as a local oscillator(LO) driver for balanced,I/Q, or image rejection mixers. The HMC903 also features inputs/outputs that are dc blocked and internally matched to 50 Q for ease of integration into multichip modules(MCMs). All data is taken with the HMC903 in a 50 Qtest fixture connected via 0.025 mm(1 mil) diameter with bonds of0.31 mm(12 mil) length. FEATURES  Noise figure:1.6 dB typical  Small signal gain:19 dB typical  Output P1dB:16 dBm typical  Single-supply voltage:3.5 V at 90 mA typical  Output IP3:27 dBm typical 50 Qmatched input/output  Self biased with optional bias control for quiescent drain  control(loo) reduction with no radio frequency(RF) applied  Die size:1.33 mm ×1.08 mm ×0.102mm  APPLICATIONS  Point to point radios  Point to multipoint radios  Military and space  Test instrumentation

Features

Applications

• Marine Navigation
• Avionics
• GPS
• GLONASS
• BeiDou
• Galileo
• Wireless communications
• ISM applications
• Wireless infrastructure
• Automated test equipment