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2N6295

Atmel 2N6295

NPN - Дарлингтон500 мкА80 V

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Atmel
2N6295
TRANS NPN DARL 80V 500UA TO66
Нет технического описания
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₽309.39

Обновление цены:несколько месяцев назад

Гарантия качества Bostock

912ob9001 201514001 201545001 201813485 2016esdduns
Детали продукта

Overview

The 2N6290 is TRANS NPN 50V 7A TO-220, that includes 2N6290 Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a BK, that offers Unit Weight features such as 0.211644 oz, Mounting Style is designed to work in Through Hole, as well as the TO-220-3 Package Case, the device can also be used as Through Hole Mounting Type. In addition, the Supplier Device Package is TO-220, the device is offered in Single Configuration, the device has a 40W of Power Max, and Transistor Type is NPN, and the Current Collector Ic Max is 7A, and Voltage Collector Emitter Breakdown Max is 50V, and the DC Current Gain hFE Min Ic Vce is 30 @ 2.5A, 4V, and Vce Saturation Max Ib Ic is 3.5V @ 3A, 7A, and the Current Collector Cutoff Max is 1mA, and Frequency Transition is 4MHz, and the Pd Power Dissipation is 40 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 65 C, and Collector Emitter Voltage VCEO Max is 50 V, and the Transistor Polarity is NPN, and Collector Emitter Saturation Voltage is 3.5 V, and the Collector Base Voltage VCBO is 60 V, and Emitter Base Voltage VEBO is 5 V, and the Maximum DC Collector Current is 7 A, and Gain Bandwidth Product fT is 4 MHz, and the Continuous Collector Current is 0.45 A, and DC Collector Base Gain hfe Min is 30.

The 2N6292G is Bipolar Transistors - BJT 7A 70V 40W NPN, that includes 80 V Collector Base Voltage VCBO, they are designed to operate with a 3.5 V Collector Emitter Saturation Voltage, Collector Emitter Voltage VCEO Max is shown on datasheet note for use in a 70 V, that offers Configuration features such as Single, Continuous Collector Current is designed to work in 7 A, as well as the 30 DC Collector Base Gain hfe Min, the device can also be used as 5 V Emitter Base Voltage VEBO. In addition, the Gain Bandwidth Product fT is 4 MHz, the device is offered in 7 A Maximum DC Collector Current, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 65 C, and the Mounting Style is Through Hole, and Package Case is TO-220-3, and the Packaging is Tube, and Pd Power Dissipation is 40 W, and the Series is 2N6292, and Transistor Polarity is NPN, and the Unit Weight is 0.211644 oz.

Features

Bulk Package
500 µA Current - Collector (Ic) (Max)
80 V Voltage - Collector Emitter Breakdown (Max)
500µA Current - Collector Cutoff (Max)
300 @ 1.5A, 3V DC Current Gain (hFE) (Min) @ Ic, Vce
50 W Power - Max
Through Hole Mounting Type
Характеристики продукта
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Пакет: Насыпной
Статус части: Активный
Тип транзистора: NPN - Дарлингтон
Коллекторный ток (Ic) (макс.): 500 мкА
Максимальное напряжение пробоя коллектора и эмиттера: 80 V
Ток - отключение коллектора (макс.): 500 мкА
Усиление постоянного тока (hFE) Минимум при Ic, Vce: 300 @ 1,5 А, 3 В
Максимальная мощность: 50 W
Рабочая температура: -65°C ~ 200°C (TJ)
Тип крепления: Сквозное отверстие
Упаковка / Кейс: К-213АА, К-66-2
Поставщик Упаковка устройства: ТО-66 (ТО-213АА)
Atmel

Atmel

Atmel Corporation - компания, специализирующаяся на разработке и производстве микроконтроллеров, встраиваемых систем и полупроводниковых решений. Основанная в 1984 году, она имеет штаб-квартиру в Санта-Кларе, Калифорния, США. В 2016 году Atmel была приобретена компанией Microchip Technology.

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