Broadcom ATF-36077-TR1

pHEMT-транзистор12 ГГц12 дБ1.5 V45 мА0,5 дБ10 мА5 дБм

Overview

The ATF-35143-TR2G is RF JFET Transistors Transistor GaAs Low Noise, that includes Reel Packaging, they are designed to operate with a SMD/SMT Mounting Style, Package Case is shown on datasheet note for use in a SOT-343, that offers Technology features such as GaAs, Configuration is designed to work in Single Dual Source, as well as the pHEMT Transistor Type, the device can also be used as 18 dB Gain. In addition, the Pd Power Dissipation is 300 mW, it has an Maximum Operating Temperature range of + 160 C, the device has a 2 GHz of Operating Frequency, and Id Continuous Drain Current is 80 mA, and the Vds Drain Source Breakdown Voltage is 5.5 V, and Transistor Polarity is N-Channel, and the Forward Transconductance Min is 120 mmho, and Vgs Gate Source Breakdown Voltage is - 5 V, and the NF Noise Figure is 0.4 dB, and P1dB Compression Point is 11 dBm.

ATF-36077 with EDA / CAD Models manufactured by Agilent. The ATF-36077 is available in RAM Package, is part of the RF FETs.

Features