Broadcom ATF-531P8-TR1

E-pHEMT2 ГГц20 дБ4 V300 мА0,6 дБ135 мА24,5 дБм

Overview

The ATF-531P8-BLK is RF JFET Transistors Transistor GaAs High Linearity, that includes Bulk Packaging, they are designed to operate with a SMD/SMT Mounting Style, Package Case is shown on datasheet note for use in a LPCC-8, that offers Technology features such as GaAs, Configuration is designed to work in Single Dual Source, as well as the EpHEMT Transistor Type, the device can also be used as 20 dB Gain. In addition, the Pd Power Dissipation is 1 W, it has an Maximum Operating Temperature range of + 150 C, the device has a 2 GHz of Operating Frequency, and Id Continuous Drain Current is 300 mA, and the Vds Drain Source Breakdown Voltage is 7 V, and Forward Transconductance Min is 650 mmho, and the Vgs Gate Source Breakdown Voltage is - 5 V to 1 V, and NF Noise Figure is 0.6 dB, and the P1dB Compression Point is 24.5 dBm.

ATF-531P8-TR with circuit diagram manufactured by AVAGV. The ATF-531P8-TR is available in QFN Package, is part of the RF FETs.

Features