Cypress S29GL512P12TFIV20

32M x 16120 нс-40°C ~ 85°C (TA)

Overview

1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology

Distinctive Characteristics ■ Single 3V read/program/erase (2.7-3.6 V) ■ Enhanced VersatileI/O™ control    – All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC ■ 90 nm MirrorBit process technology ■ 8-word/16-byte page read buffer ■ 32-word/64-byte write buffer reduces overall programming time for multiple-word updates ■ Secured Silicon Sector region    – 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number    – Can be programmed and locked at the factory or by the customer ■ Uniform 64 Kword/128 Kbyte Sector Architecture    – S29GL01GP: One thousand twenty-four sectors    – S29GL512P: Five hundred twelve sectors    – S29GL256P: Two hundred fifty-six sectors    – S29GL128P: One hundred twenty-eight sectors ■ 100,000 erase cycles per sector typical ■ 20-year data retention typical ■ Offered Packages    – 56-pin TSOP    – 64-ball Fortified BGA ■ Suspend and Resume commands for Program and Erase operations ■ Write operation status bits indicate program and erase operation completion ■ Unlock Bypass Program command to reduce programming time ■ Support for CFI (Common Flash Interface) ■ Persistent and Password methods of Advanced Sector Protection ■ WP#/ACC input    – Accelerates programming time (when VHH is applied) for greater throughput during system production    – Protects first or last sector regardless of sector protection settings ■ Hardware reset input (RESET#) resets device ■ Ready/Busy# output (RY/BY#) detects program or erase cycle completion

Features