Fairchild FDPC1012S

MOSFET (оксид металла)2 N-канальные (сдвоенные) асимметричные25V13A (Ta), 35A (Tc), 26A (Ta), 88A (Tc)7 мОм @ 12А, 4,5В, 2,2 мОм @ 23А, 4,5В2,2 В @ 250 мкА, 2,2 В @ 1 мА

Overview

The FDP8N50NZ is MOSFET N-CH 500V TO-220AB-3, that includes Tube Packaging, they are designed to operate with a 0.063493 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-220-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 139 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 60 ns, and Rise Time is 80 ns, and the Id Continuous Drain Current is 8 A, and Vds Drain Source Breakdown Voltage is 500 V, and the Vgs th Gate Source Threshold Voltage is 5 V, and Rds On Drain Source Resistance is 770 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 95 ns, and the Typical Turn On Delay Time is 45 ns, and Qg Gate Charge is 18 nC, and the Forward Transconductance Min is 6.3 S, and Channel Mode is Enhancement.

The FDP8880 is MOSFET N-CH 30V 54A TO-220AB, that includes Tube Packaging, they are designed to operate with a TO-220-3 Package Case, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Configuration features such as Single, Technology is designed to work in Si, as well as the N-Channel Transistor Polarity, the device can also be used as FDP8880_NL Part Aliases. In addition, the Channel Mode is Enhancement, the device is offered in 8 ns Typical Turn On Delay Time, the device has a 55 W of Pd Power Dissipation, and Id Continuous Drain Current is 54 A, and the Fall Time is 51 ns, and Typical Turn Off Delay Time is 47 ns, and the Vds Drain Source Breakdown Voltage is 30 V, and Vgs Gate Source Voltage is 20 V, and the Rds On Drain Source Resistance is 11.6 mOhms, and Rise Time is 107 ns, and the Transistor Type is 1 N-Channel, and Number of Channels is 1 Channel, and the Unit Weight is 0.063493 oz, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C.

Features

Bulk Package
MOSFET (Metal Oxide) Technology
25V Drain to Source Voltage (Vdss)
13A (Ta), 35A (Tc), 26A (Ta), 88A (Tc) Current - Continuous Drain (Id) @ 25°C
7mOhm @ 12A, 4.5V, 2.2mOhm @ 23A, 4.5V Rds On (Max) @ Id, Vgs
2.2V @ 250µA, 2.2V @ 1mA Vgs(th) (Max) @ Id
8nC @ 4.5V, 25nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
1075pF @ 13V, 3456pF @ 13V Input Capacitance (Ciss) (Max) @ Vds
800mW (Ta), 900mW (Ta) Power - Max
Surface Mount Mounting Type