Fairchild FDS6986S

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)30V6.5A, 7.9A29 мОм @ 6,5 А, 10 В, 20 мОм @ 7,9 А, 10 В3 В @ 250 мкА, 3 В @ 1 мА

Overview

The FDS6986AS is MOSFET 2N-CH 30V 6.5A/7.9A 8SOIC, that includes PowerTrenchR, SyncFET? Series, they are designed to operate with a Digi-ReelR Packaging, Part Aliases is shown on datasheet note for use in a FDS6986AS_NL, that offers Unit Weight features such as 0.006596 oz, Mounting Style is designed to work in SMD/SMT, as well as the 8-SOIC (0.154", 3.90mm Width) Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 2 Channel of Number of Channels, and Supplier Device Package is 8-SO, and the Configuration is Dual, and FET Type is 2 N-Channel (Dual), and the Power Max is 900mW, and Transistor Type is 2 N-Channel, and the Drain to Source Voltage Vdss is 30V, and Input Capacitance Ciss Vds is 720pF @ 10V, and the FET Feature is Logic Level Gate, and Current Continuous Drain Id 25°C is 6.5A, 7.9A, and the Rds On Max Id Vgs is 29 mOhm @ 6.5A, 10V, and Vgs th Max Id is 3V @ 250μA, and the Gate Charge Qg Vgs is 17nC @ 10V, and Pd Power Dissipation is 2 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 3 ns, and Rise Time is 9 ns, and the Vgs Gate Source Voltage is 16 V 20 V, and Id Continuous Drain Current is 6.5 A, and the Vds Drain Source Breakdown Voltage is 30 V, and Rds On Drain Source Resistance is 20 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 24 ns, and the Typical Turn On Delay Time is 10 ns, and Forward Transconductance Min is 25 S 15 S, and the Channel Mode is Enhancement.

FDS6986AS_NL with circuit diagram manufactured by FSC. The FDS6986AS_NL is available in SOP8 Package, is part of the IC Chips.

Features

PowerTrench® Series
Bulk Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
30V Drain to Source Voltage (Vdss)
6.5A, 7.9A Current - Continuous Drain (Id) @ 25°C
29mOhm @ 6.5A, 10V, 20mOhm @ 7.9A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA, 3V @ 1mA Vgs(th) (Max) @ Id
9nC @ 5V, 16nC @ 5V Gate Charge (Qg) (Max) @ Vgs
695pF @ 10V, 1233pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
900mW (Ta) Power - Max
Surface Mount Mounting Type