IXYS IXCP02M35A

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Overview

The IXCP01N90E is MOSFET 0.01 Amps 900V, that includes IXCP01N90E Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 0.081130 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-220-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 40 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 74 ns, and the Rise Time is 27 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 6.5 A, and Vds Drain Source Breakdown Voltage is 900 V, and the Rds On Drain Source Resistance is 80 Ohms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 61 ns, and Typical Turn On Delay Time is 21 ns, and the Channel Mode is Enhancement.

IXCD6006SI-18 with circuit diagram manufactured by IXYS. The IXCD6006SI-18 is available in SOP-18 Package, is part of the IC Chips.

Features

Applications

• Over current monitor
• Power management
• Programmable current source
• Automotive current measurement
• Industrial applications current measurement
• Battery management
• Over current monitor
• Over-current measurement
• Current sensing
• Motor controls