Lattice GAL22V10D-4LJN

PAL104,75 В ~ 5,25 В4 нс

Overview

The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2 ) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10D-10LJN to consume much less power when compared to bipolar 22V10 devices. E2 technology offers high speed (<100ms) erase times, providing the ability to reprogram or reconfigure the device quickly and efficiently. 

— Standard Logic Speed Upgrade

Features