MACOM CGHV1F006S-AMP3

ХЕМТ0 Гц ~ 18 ГГцCGHV1F006

Overview

CGHV14500F with pin details, that includes Tube Packaging, they are designed to operate with a Screw Mounting Style, Package Case is shown on datasheet note for use in a 440117, that offers Technology features such as GaN SiC, Configuration is designed to work in Single, as well as the HEMT Transistor Type, the device can also be used as 17.1 dB Gain. In addition, the Output Power is 510 W, it has an Maximum Operating Temperature range of + 130 C, it has an Minimum Operating Temperature range of - 40 C, and Operating Frequency is 1.2 GHz to 1.4 GHz, and the Id Continuous Drain Current is 36 A, and Vds Drain Source Breakdown Voltage is 150 V, and the Vgs th Gate Source Threshold Voltage is - 3 V, and Transistor Polarity is N-Channel, and the Development Kit is CGHV14500F-TB, and Vgs Gate Source Breakdown Voltage is - 10 V to + 2 V.

CGHV14500-TB with circuit diagram, that includes Demonstration board for CGHV14500F Description Function, they are designed to operate with a CGHV14500F For Use With, For Use With Related Products is shown on datasheet note for use in a CGHV14500, that offers Frequency features such as 1.2GHz ~ 1.4GHz, it has an Maximum Operating Temperature range of + 130 C, it has an Minimum Operating Temperature range of - 40 C, the device can also be used as Bulk Packaging. In addition, the Product is Demonstration Boards, the device is offered in Partially Populated Board - Main IC Not Included Supplied Contents, the device has a CGHV14500F of Tool Is For Evaluation Of, and Type is FET.

Features