MACOM MA4E2039

Шоттки - одиночный0,06пФ при 0 В, 1 МГц7 Ом @ 10 мА, 1 МГц-65°C ~ 125°C

Overview

MACOM’s MA4E2037 and MA4E2038 single diodes,MA4E2039 anti-parallel pair and MA4E2040 series teeare gallium arsenide beam lead Schottky barrier diodes.These devices are fabricated on OMCVD epitaxial wafersusing a process designed for high device uniformityand extremely low parasitics. The high carrier mobility ofgallium arsenide results in lower series resistance than asilicon Schottky with equivalent capacitance, resulting inlower noise figure and conversion loss. The diodes arefully passivated with silicon nitride and have an additionallayer of a polymer for scratch protection. The protectivecoatings prevent damage to the junction and theanode air bridge during handling.The high cut-off frequency of these diodes allows usethrough millimeter wave frequencies. Typical applicationsinclude single and double balanced mixers in PCNtransceivers and radios, automotive radar systems andpolice radar detectors.The MA4E2039 anti-parallel pair is designed for use insub harmonically pumped mixers. Close matching of thediode characteristics in high LO suppression at the RFinput.

Features