MACOM MADS-002502-1246LP

Шоттки - одиночный5V20 мА0.12pF @ 0V, 18GHz50 мВт175°C (TJ)

Overview

The MA4E2502 SURMOUNT™ Series Diodes areSilicon Low, Medium, and High Barrier SchottkyDevices fabricated with the patented HeterolithicMicrowave Integrated Circuit (HMIC™) process.HMIC™ circuits consist of Silicon pedestals whichform diodes or via conductors embedded in a glassdielectric, which acts as the low dispersion, microstriptransmission medium. The combination of silicon and glass allows HMIC™ devices to have excellentloss and power dissipation characteristics ina low profile, reliable device.The Surmount Schottky devices are excellentchoices for circuits requiring the small parasitics ofa beam lead device coupled with the superior mechanicalperformance of a chip. The Surmount structure employs very low resistance silicon vias to connect the Schottky contacts to the metalized mounting pads on the bottom surface of the chip.These devices are reliable, repeatable, and a lowercost performance solution to conventional devices.They have lower susceptibility to electrostatic dischargethan conventional beam lead Schottky diodes.The multilayer metallization employed in the fabricationof the Surmount Schottky junctions includesa platinum diffusion barrier, which permits all devicesto be subjected to a 16-hour non-operatingstabilization bake at 300°C.The “0502” outline allows for Surface Mount placementand multi-functional polarity orientations.The MA4E2502 Family of Surmount Schottky diodesare recommended for use in microwave circuitsthrough Ku band frequencies for lower powerapplications such as mixers, sub-harmonic mixers,detectors, and limiters. The HMIC™ constructionfacilitates the direct replacement of more fragilebeam lead diodes with the corresponding Surmountdiode, which can be connected to a hard orsoft substrate circuit with solder.

Features