Microchip 2N3720

PNP10 мкА60 V

Overview

:These power transistors are produced by PPCs DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications.

: Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: hFE @ IC = 250 mA: 30-100 Excellent Safe Area Limits Low Collector Cutoff Current: 100 nA (Max) 2N3740A

Features

Bulk Package
PNP Transistor Type
10 µA Current - Collector (Ic) (Max)
60 V Voltage - Collector Emitter Breakdown (Max)
1.5V @ 300mA, 3A Vce Saturation (Max) @ Ib, Ic
10µA Current - Collector Cutoff (Max)
25 @ 1A, 1.5V DC Current Gain (hFE) (Min) @ Ic, Vce
6 W Power - Max
60MHz Frequency - Transition
Through Hole Mounting Type