Microchip 2N6322

NPN30 A200 V

Overview

The 2N6316 is Bipolar Transistors - BJT . ., that includes 2N6316 Series, they are designed to operate with a Tube Packaging, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-66-2, Technology is designed to work in Si, as well as the Single Configuration, the device can also be used as 90 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 200 C, it has an Minimum Operating Temperature range of - 65 C, the device has a 80 V of Collector Emitter Voltage VCEO Max, and Transistor Polarity is NPN, and the Collector Emitter Saturation Voltage is 2 V, and Collector Base Voltage VCBO is 80 V, and the Emitter Base Voltage VEBO is 5 V, and Maximum DC Collector Current is 15 A, and the Gain Bandwidth Product fT is 4 MHz, and DC Collector Base Gain hfe Min is 20 at 500 mA at 4 V, and the DC Current Gain hFE Max is 100 at 2.5 A at 4 V.

The 2N6317 is TRANS PNP 60V 7A TO-213AA manufactured by MOT. The 2N6317 is available in TO-213AA, TO-66-2 Package, is part of the Transistors (BJT) - Single, , and with support for TRANS PNP 60V 7A TO-213AA, Bipolar (BJT) Transistor PNP 60V 7A 90W Through Hole, Trans GP BJT PNP 60V 7A 3-Pin(2+Tab) TO-66, Bipolar Transistors - BJT PNP Transistor.

Features