Microchip 2N6661

N-канальный90 V350 мА (Tj)2 В @ 1 мА6,25 Вт (Тс)-55°C ~ 150°C (TJ)Сквозное отверстие

Overview

2N6661 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Features

Bag Package
a continuous drain current (ID) of 350mA
a drain-to-source breakdown voltage of 90V voltage
the turn-off delay time is 10 ns
single MOSFETs transistor is 4Ohm
a threshold voltage of 800mV
a 90V drain to source voltage (Vdss)

Through Hole Mounting Type

Applications

There are a lot of Microchip Technology
2N6661 applications of single MOSFETs transistors.

• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies