Microchip DN2470K4-G

N-канальный700 V170 мА (Tj)2,5 Вт (Ta)-55°C ~ 150°C (TJ)Поверхностный монтаж

Overview

The DN2470K4-G is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure andwell-proven silicon-gate manufacturing process.This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FET is ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Features

Tape & Reel (TR) Package
a continuous drain current (ID) of 170mA
a drain-to-source breakdown voltage of 700V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 0.5A.

Surface Mount Mounting Type

Applications

There are a lot of Microchip Technology
DN2470K4-G applications of single MOSFETs transistors.

• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies