Microchip JAN1N5552

Стандарт600 V3A

Overview

The JAN1N5551 is DIODE GEN PURP 400V 3A AXIAL, that includes Military, MIL-PRF-19500/420 Series, they are designed to operate with a Bulk Packaging, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as B, Axial, Mounting Type is designed to work in Through Hole, as well as the Standard Recovery >500ns, > 200mA (Io) Speed, the device can also be used as Standard Diode Type. In addition, the Current Reverse Leakage Vr is 1μA @ 400V, the device is offered in 1.2V @ 9A Voltage Forward Vf Max If, the device has a 400V of Voltage DC Reverse Vr Max, and Current Average Rectified Io is 3A, and the Reverse Recovery Time trr is 2μs, it has an Operating Temperature Junction range of -65°C ~ 175°C.

JAN1N5551US with circuit diagram, that includes 3A Current Average Rectified Io, they are designed to operate with a 1μA @ 400V Current Reverse Leakage Vr, Diode Type is shown on datasheet note for use in a Standard, that offers Mounting Type features such as Surface Mount, Mounting Style is designed to work in SMD/SMT, it has an Operating Temperature Junction range of -65°C ~ 175°C, the device can also be used as SQ-MELF, B Package Case. In addition, the Packaging is Bulk, the device is offered in 2μs Reverse Recovery Time trr, the device has a Military, MIL-PRF-19500/420 of Series, and Speed is Fast Recovery = 200mA (Io), and the Supplier Device Package is D-5B, and Voltage DC Reverse Vr Max is 400V, and the Voltage Forward Vf Max If is 1.2V @ 9A.

Features

Applications

• DC motor control and drives
• Battery chargers
• Welders
• Power converters
• Reverse Polarity Protection
• Ultra High-Speed Switching
• Freewheeling
• Polarity Protection Diode
• Recirculating Diode
• Switching Diode