Microchip JAN1N5819UR-1

Шоттки45 V1A

Overview

The JAN1N5816 is DIODE GEN PURP 150V 20A DO203AA, that includes MILITARY, MIL-PRF-19500/478 Series, they are designed to operate with a Bulk Packaging, Package Case is shown on datasheet note for use in a DO-203AA, DO-4, Stud, that offers Mounting Type features such as Chassis, Stud Mount, Supplier Device Package is designed to work in DO-203AA (DO-4), as well as the Fast Recovery = 200mA (Io) Speed, the device can also be used as Standard Diode Type. In addition, the Current Reverse Leakage Vr is 10μA @ 150V, the device is offered in 950mV @ 20A Voltage Forward Vf Max If, the device has a 150V of Voltage DC Reverse Vr Max, and Current Average Rectified Io is 20A, and the Reverse Recovery Time trr is 35ns, and Capacitance Vr F is 300pF @ 10V, 1MHz, it has an Operating Temperature Junction range of -65°C ~ 175°C.

JAN1N5819-1 with circuit diagram, that includes 1A Current Average Rectified Io, they are designed to operate with a 50μA @ 45V Current Reverse Leakage Vr, Diode Type is shown on datasheet note for use in a Schottky, that offers Mounting Type features such as Through Hole, it has an Operating Temperature Junction range of -65°C ~ 150°C, as well as the DO-204AL, DO-41, Axial Package Case, the device can also be used as Bulk Packaging. In addition, the Series is Military, MIL-PRF-19500/586, the device is offered in Fast Recovery = 200mA (Io) Speed, the device has a DO-41 of Supplier Device Package, and Voltage DC Reverse Vr Max is 45V, and the Voltage Forward Vf Max If is 490mV @ 1A.

Features

Applications

• DC motor control and drives
• Battery chargers
• Welders
• Power converters
• Reverse Polarity Protection
• Ultra High-Speed Switching
• Freewheeling
• Polarity Protection Diode
• Recirculating Diode
• Switching Diode