Microchip RN-111B-S

802.11b2,4 ГГц12 дБм

Overview

The RN1119MFV(TPL3) is Bipolar Transistors - Pre-Biased Bias Resistor, that includes Reel Packaging, they are designed to operate with a SMD/SMT Mounting Style, Package Case is shown on datasheet note for use in a SOT-723, that offers Configuration features such as Single, Pd Power Dissipation is designed to work in 150 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 65 C. In addition, the Collector Emitter Voltage VCEO Max is 50 V, the device is offered in NPN Transistor Polarity, the device has a 5 V of Emitter Base Voltage VEBO, and Continuous Collector Current is 100 mA, and the DC Collector Base Gain hfe Min is 120, and Typical Input Resistor is 1 kOhms, and the Peak DC Collector Current is 100 mA.

RN1119MFV (TL3T) with circuit diagram manufactured by TOSHIBA. The RN1119MFV (TL3T) is available in SOT-723 Package, is part of the IC Chips.

Features

Applications

• Power Amplifier (PA)
• Low Noise Amplifier (LNA)
• Transmit
• Receive
• Switch
• Power management
• Internet of Things (IoT)
• Secure Payment
• Home and Security
• Health and Fitness