Microchip VN2110K1-G

N-канальный100 V200 мА (Tj)2,4 В @ 1 мА360 мВт (Тс)-55°C ~ 150°C (TJ)Поверхностный монтаж

Overview

VN2106N3-G P013 with pin details, that includes Reel Packaging, they are designed to operate with a 0.016000 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-92-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 1 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 5 ns, and Rise Time is 5 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 300 mA, and the Vds Drain Source Breakdown Voltage is 60 V, and Rds On Drain Source Resistance is 6 Ohms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 6 ns, and the Typical Turn On Delay Time is 3 ns, and Channel Mode is Enhancement.

VN2110K with circuit diagram manufactured by SI. The VN2110K is available in SOT23-3 Package, is part of the FETs - Single.

Features

Applications

• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
• Lighting, Server, Telecom and UPS.