Microsemi 1N3600

Стандарт50 V200 мА

Overview

The 1N3595TR is DIODE GEN PURP 150V 200MA DO35, that includes Cut Tape (CT) Alternate Packaging Packaging, they are designed to operate with a DO-204AH, DO-35, Axial Package Case, Mounting Type is shown on datasheet note for use in a Through Hole, that offers Supplier Device Package features such as DO-35, Speed is designed to work in Small Signal =, as well as the Standard Diode Type, the device can also be used as 1nA @ 125V Current Reverse Leakage Vr. In addition, the Voltage Forward Vf Max If is 1V @ 200mA, the device is offered in 150V Voltage DC Reverse Vr Max, the device has a 200mA of Current Average Rectified Io, and Reverse Recovery Time trr is 3μs, and the Capacitance Vr F is 8pF @ 0V, 1MHz, it has an Operating Temperature Junction range of 175°C (Max).

The 1N3595UR-1 is DIODE GEN PURP 125V 150MA DO213, that includes 150mA (DC) Current Average Rectified Io, they are designed to operate with a 1nA @ 125V Current Reverse Leakage Vr, Diode Type is shown on datasheet note for use in a Standard, that offers Mounting Type features such as Surface Mount, it has an Operating Temperature Junction range of -65°C ~ 175°C, as well as the DO-213AA Package Case, the device can also be used as Bulk Packaging. In addition, the Reverse Recovery Time trr is 3μs, the device is offered in Small Signal = Speed, the device has a DO-213AA of Supplier Device Package, and Voltage DC Reverse Vr Max is 125V, and the Voltage Forward Vf Max If is 1V @ 200mA.

Features

Applications

• DC motor control and drives
• Battery chargers
• Welders
• Power converters
• Reverse Polarity Protection
• Ultra High-Speed Switching
• Freewheeling
• Polarity Protection Diode
• Recirculating Diode
• Switching Diode