Microsemi 2N3743

PNP200 мА300 V

Overview

The 2N3741A is Bipolar Transistors - BJT PNP Pwr Trans 80V 4.0A 25W, that includes 2N3741 Series, they are designed to operate with a Bulk Packaging, Part Aliases is shown on datasheet note for use in a BK, that offers Mounting Style features such as Through Hole, Tradename is designed to work in 2N3741, as well as the TO-66-2 Package Case, the device can also be used as Si Technology. In addition, the Configuration is Single, the device is offered in 25 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 200 C, it has an Minimum Operating Temperature range of - 65 C, and the Collector Emitter Voltage VCEO Max is 60 V, and Transistor Polarity is PNP, and the Collector Emitter Saturation Voltage is 0.6 V, and Collector Base Voltage VCBO is 60 V, and the Emitter Base Voltage VEBO is 7 V, and Maximum DC Collector Current is 10 A, and the Gain Bandwidth Product fT is 4 MHz, and DC Collector Base Gain hfe Min is 25 at 50 mA at 10 V, and the DC Current Gain hFE Max is 200 at 250 mA at 1 V.

The 2N3740A is Bipolar Transistors - BJT PNP Transistor, that includes TO-66 Package Case, they are designed to operate with a Through Hole Mounting Style.

Features

Bulk Package
PNP Transistor Type
200 mA Current - Collector (Ic) (Max)
300 V Voltage - Collector Emitter Breakdown (Max)
1.2V @ 3mA, 30mA Vce Saturation (Max) @ Ib, Ic
250nA (ICBO) Current - Collector Cutoff (Max)
50 @ 30mA, 10V DC Current Gain (hFE) (Min) @ Ic, Vce
1 W Power - Max
Through Hole Mounting Type