Microsemi 2N3792

PNP10 A80 V

Overview

The 2N3790 is Bipolar Transistors - BJT PNP GP Power, that includes 2N3790 Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 0.225789 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-3, as well as the 150000 mW Pd Power Dissipation, it has an Maximum Operating Temperature range of + 200 C, it has an Minimum Operating Temperature range of - 65 C, the device is offered in 80 V Collector Emitter Voltage VCEO Max, the device has a PNP of Transistor Polarity, and Collector Emitter Saturation Voltage is 1 V, and the Collector Base Voltage VCBO is 80 V, and Emitter Base Voltage VEBO is 7 V, and the Maximum DC Collector Current is 10 A, and Gain Bandwidth Product fT is 4 MHz, and the Continuous Collector Current is 10 A, and DC Collector Base Gain hfe Min is 25 at 3 A 2 V, and the DC Current Gain hFE Max is 25.

The 2N3789 is Bipolar Transistors - BJT PNP GP Power, that includes 60 V Collector Base Voltage VCBO, they are designed to operate with a 1 V Collector Emitter Saturation Voltage, Collector Emitter Voltage VCEO Max is shown on datasheet note for use in a 60 V, that offers Continuous Collector Current features such as 10 A, DC Collector Base Gain hfe Min is designed to work in 25, as well as the 7 V Emitter Base Voltage VEBO, the device can also be used as 4 MHz Gain Bandwidth Product fT. In addition, the Maximum DC Collector Current is 10 A, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 65 C, and Mounting Style is Through Hole, and the Package Case is TO-3, and Packaging is Sleeve, and the Pd Power Dissipation is 150 W, and Series is 2N3789, and the Transistor Polarity is PNP, and Unit Weight is 0.225789 oz.

Features

Applications

• Inverter
• Interface
• Driver
• Muting