Microsemi 2N3811

2 PNP (двойной)50 мА60V

Overview

The 2N3810 is TRANS 2PNP 60V 0.05A TO-78, that includes Bulk Packaging, they are designed to operate with a Through Hole Mounting Style, Package Case is shown on datasheet note for use in a TO-78-6 Metal Can, that offers Mounting Type features such as Through Hole, Supplier Device Package is designed to work in TO-78-6, as well as the 350mW Power Max, the device can also be used as 2 PNP (Dual) Transistor Type. In addition, the Current Collector Ic Max is 50mA, the device is offered in 60V Voltage Collector Emitter Breakdown Max, the device has a 150 @ 1mA, 5V of DC Current Gain hFE Min Ic Vce, and Vce Saturation Max Ib Ic is 250mV @ 100μA, 1mA, and the Current Collector Cutoff Max is 10μA (ICBO).

2N3810U with circuit diagram, that includes 10μA (ICBO) Current Collector Cutoff Max, they are designed to operate with a 50mA Current Collector Ic Max, DC Current Gain hFE Min Ic Vce is shown on datasheet note for use in a 150 @ 1mA, 5V, that offers Mounting Type features such as Through Hole, Mounting Style is designed to work in Through Hole, as well as the TO-78-6 Metal Can Package Case, the device can also be used as Bulk Packaging. In addition, the Power Max is 350mW, the device is offered in TO-78-6 Supplier Device Package, the device has a 2 PNP (Dual) of Transistor Type, and Vce Saturation Max Ib Ic is 250mV @ 100μA, 1mA, and the Voltage Collector Emitter Breakdown Max is 60V.

Features

Bulk Package
2 PNP (Dual) Transistor Type
50mA Current - Collector (Ic) (Max)
60V Voltage - Collector Emitter Breakdown (Max)
250mV @ 100µA, 1mA Vce Saturation (Max) @ Ib, Ic
10µA (ICBO) Current - Collector Cutoff (Max)
300 @ 1mA, 5V DC Current Gain (hFE) (Min) @ Ic, Vce
350mW Power - Max
Through Hole Mounting Type