Microsemi 2N6052

PNP - Дарлингтон12 A100 V

Overview

The 2N6050 is Darlington Transistors PNP Pwr Darlington, that includes 2N6050 Series, they are designed to operate with a 0.225789 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-3, Configuration is designed to work in Single, as well as the 150 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 200 C, it has an Minimum Operating Temperature range of - 65 C, the device is offered in 60 V Collector Emitter Voltage VCEO Max, the device has a PNP of Transistor Polarity, and Collector Base Voltage VCBO is 60 V, and the Emitter Base Voltage VEBO is 5 V, and Maximum DC Collector Current is 12 A, and the Continuous Collector Current is 12 A, and DC Collector Base Gain hfe Min is 750.

2N604L with circuit diagram manufactured by lnfineon. The 2N604L is available in SOP8 Package, is part of the IC Chips.

Features

Tray Package
the DC current gain for this device is 750 @ 6A 3V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V
the current rating of this device is -12A
the supplier device package of TO-204 (TO-3)

Through Hole Mounting Type

Applications

There are a lot of ON Semiconductor
2N6052 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting