Microsemi 2N6438

Overview

The 2N6433 is Bipolar Transistors - BJT PNP High Voltage, that includes 2N6433 Series, they are designed to operate with a Box Packaging, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-18, Configuration is designed to work in Single, as well as the 500 mW Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 65 C, the device is offered in 300 V Collector Emitter Voltage VCEO Max, the device has a PNP of Transistor Polarity, and Collector Emitter Saturation Voltage is 0.5 V, and the Collector Base Voltage VCBO is 300 V, and Emitter Base Voltage VEBO is 5 V, and the Maximum DC Collector Current is 0.1 A, and Gain Bandwidth Product fT is 50 MHz, and the Continuous Collector Current is 100 mA, and DC Collector Base Gain hfe Min is 30, and the DC Current Gain hFE Max is 150.

The 2N6437 is Bipolar Transistors - BJT PNP Transistor manufactured by IN. The 2N6437 is available in TO-3 Package, is part of the Transistors (BJT) - Single, , and with support for Bipolar Transistors - BJT PNP Transistor, Trans GP BJT PNP 100V 25A 3-Pin(2+Tab) TO-3.

Features

Applications

• Inverter
• Interface
• Driver
• Muting