Microsemi APT100S20BG

Шоттки200 V120A

Overview

The APT100M50J is Discrete Semiconductor Modules Power MOSFET - MOS8, that includes Power MOSFET Modules Product, they are designed to operate with a 1.058219 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Screw, that offers Tradename features such as POWER MOS 8 ISOTOP, Package Case is designed to work in SOT-227-4, as well as the Single Configuration, the device can also be used as 960 W Pd Power Dissipation. In addition, the Fall Time is 90 ns, the device is offered in 125 ns Rise Time, the device has a 30 V of Vgs Gate Source Voltage, and Id Continuous Drain Current is 103 A, and the Vds Drain Source Breakdown Voltage is 500 V, and Vgs th Gate Source Threshold Voltage is 3 V, and the Rds On Drain Source Resistance is 28 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 280 ns, and Typical Turn On Delay Time is 105 ns.

The APT100S20B is DIODE SCHOTTKY 200V 120A TO247 manufactured by APT. The APT100S20B is available in TO-247-2 Package, is part of the Diodes, Rectifiers - Single, , and with support for DIODE SCHOTTKY 200V 120A TO247.

Features

Applications

• DC motor control and drives
• Battery chargers
• Welders
• Power converters
• Reverse Polarity Protection
• Ultra High-Speed Switching
• Freewheeling
• Polarity Protection Diode
• Recirculating Diode
• Switching Diode