Microsemi APT25GP120BDQ1G

1200 V69 A500 мкДж (вкл.), 440 мкДж (выкл.)-55°C ~ 150°C (TJ)TO-247-3

Overview

The APT25GN120SG is IGBT 1200V 67A 272W D3PAK, that includes Tube Packaging, they are designed to operate with a SMD/SMT Mounting Style, Package Case is shown on datasheet note for use in a TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, that offers Input Type features such as Standard, Mounting Type is designed to work in Surface Mount, as well as the D3Pak Supplier Device Package, the device can also be used as Single Configuration. In addition, the Power Max is 272W, the device is offered in 67A Current Collector Ic Max, the device has a 1200V of Voltage Collector Emitter Breakdown Max, and IGBT Type is Trench Field Stop, and the Current Collector Pulsed Icm is 75A, and Vce on Max Vge Ic is 2.1V @ 15V, 25A, and the Gate Charge is 155nC, and Td on off 25°C is 22ns/280ns, and the Test Condition is 800V, 25A, 1 Ohm, 15V, and Pd Power Dissipation is 272 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Collector Emitter Voltage VCEO Max is 1.2 kV, and Collector Emitter Saturation Voltage is 1.7 V, and the Continuous Collector Current at 25 C is 67 A, and Gate Emitter Leakage Current is 600 nA, and the Maximum Gate Emitter Voltage is 30 V, and Continuous Collector Current Ic Max is 67 A.

APT25GP120BDQ1 with circuit diagram manufactured by APT. The APT25GP120BDQ1 is available in MODULE Package, is part of the Module.

Features

POWER MOS 7® Series
Tube Package
PT IGBT Type
1200 V Voltage - Collector Emitter Breakdown (Max)
69 A Current - Collector (Ic) (Max)
90 A Current - Collector Pulsed (Icm)
3.9V @ 15V, 25A Vce(on) (Max) @ Vge, Ic
417 W Power - Max
500µJ (on), 440µJ (off) Switching Energy
Standard Input Type
110 nC Gate Charge
12ns/70ns Td (on/off) @ 25°C
600V, 25A, 5Ohm, 15V Test Condition
Through Hole Mounting Type