Microsemi APT30S20BCTG

1 пара Общий катод200 V

Overview

The APT30M85BVRG is MOSFET N-CH 300V 40A TO-247, that includes Reel Packaging, they are designed to operate with a 1.340411 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Tradename features such as Power MOS V, Package Case is designed to work in TO-247-3, as well as the Si Technology, the device can also be used as 300 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, the device has a 7 ns of Fall Time, and Rise Time is 10 ns, and the Vgs Gate Source Voltage is 30 V, and Id Continuous Drain Current is 40 A, and the Vds Drain Source Breakdown Voltage is 300 V, and Vgs th Gate Source Threshold Voltage is 4 V, and the Rds On Drain Source Resistance is 85 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 43 ns, and Typical Turn On Delay Time is 12 ns, and the Qg Gate Charge is 130 nC, and Channel Mode is Enhancement.

The APT30N60SC6 is IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single manufactured by Microsemi. The APT30N60SC6 is available in D3PAK Package, is part of the IGBTs - Single, , and with support for IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single, N-Channel 600V 30A (Tc) 219W (Tc) Surface Mount D3Pak.

Features

Applications

• Rectifier for drives applications
• Crowbar applications
• Rectifiers for UBS
• Battery chargers
• Rectifiers in switch mode power supplies (SMPS)
• Free wheeling diode in low voltage converters
• General Rectification