Microsemi APT65GP60L2DQ2G

600 V198 A605 мкДж (вкл.), 895 мкДж (выкл.)-55°C ~ 150°C (TJ)К-264-3, К-264АА

Overview

The APT65GP60B2G is IGBT 600V 100A 833W TMAX, that includes POWER MOS 7R Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 1.340411 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-247-3 Variant, as well as the Standard Input Type, the device can also be used as Through Hole Mounting Type. In addition, the Power Max is 833W, the device is offered in 100A Current Collector Ic Max, the device has a 600V of Voltage Collector Emitter Breakdown Max, and IGBT Type is PT, and the Current Collector Pulsed Icm is 250A, and Vce on Max Vge Ic is 2.7V @ 15V, 65A, and the Switching Energy is 605μJ (on), 896μJ (off), and Gate Charge is 210nC, and the Td on off 25°C is 30ns/91ns, and Test Condition is 400V, 65A, 5 Ohm, 15V.

The APT65GP60JDQ2 is IGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi manufactured by APT. The APT65GP60JDQ2 is available in MODULE Package, is part of the Module, , and with support for IGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi.

Features

POWER MOS 7® Series
Tube Package
PT IGBT Type
600 V Voltage - Collector Emitter Breakdown (Max)
198 A Current - Collector (Ic) (Max)
250 A Current - Collector Pulsed (Icm)
2.7V @ 15V, 65A Vce(on) (Max) @ Vge, Ic
833 W Power - Max
605µJ (on), 895µJ (off) Switching Energy
Standard Input Type
210 nC Gate Charge
30ns/90ns Td (on/off) @ 25°C
400V, 65A, 5Ohm, 15V Test Condition
Through Hole Mounting Type