Microsemi APT9M100S

N-канальный1000 V9A (Tc)5 В @ 1 мА335 Вт (Тс)-55°C ~ 150°C (TJ)Поверхностный монтаж

Overview

The APT9F100B is MOSFET Power FREDFET - MOS8, that includes 0.229281 oz Unit Weight, they are designed to operate with a Through Hole Mounting Style, Package Case is shown on datasheet note for use in a TO-247, that offers Technology features such as Si, Configuration is designed to work in Single, as well as the 337 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, the device is offered in 24 ns Fall Time, the device has a 27 ns of Rise Time, and Vgs Gate Source Voltage is +/- 30 V, and the Id Continuous Drain Current is 9 A, and Vds Drain Source Breakdown Voltage is 1 kV, and the Vgs th Gate Source Threshold Voltage is 4 V, and Rds On Drain Source Resistance is 1.6 Ohms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 84 ns, and the Typical Turn On Delay Time is 27 ns, and Qg Gate Charge is 80 nC, and the Forward Transconductance Min is 10 S, and Channel Mode is Enhancement.

The APT9F100S is MOSFET Power FREDFET - MOS8, that includes Si Technology.

Features

POWER MOS 8™ Series
Tube Package
MOSFET (Metal Oxide) Technology
1000 V Drain to Source Voltage (Vdss)
9A (Tc) Current - Continuous Drain (Id) @ 25°C
10V Drive Voltage (Max Rds On, Min Rds On)
1.4Ohm @ 5A, 10V Rds On (Max) @ Id, Vgs
5V @ 1mA Vgs(th) (Max) @ Id
80 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±30V Vgs (Max)
2605 pF @ 25 V Input Capacitance (Ciss) (Max) @ Vds
335W (Tc) Power Dissipation (Max)
Surface Mount Mounting Type
D3PAK Supplier Device Package