Microsemi JANTX1N5615US

Стандарт200 V1A

Overview

The JANTX1N5614US is DIODE GEN PURP 200V 1A D5A, that includes Military, MIL-PRF-19500/437 Series, they are designed to operate with a Standard Recovery Rectifiers Product, Packaging is shown on datasheet note for use in a Bulk, that offers Package Case features such as SQ-MELF, A, Mounting Type is designed to work in Surface Mount, as well as the D-5A Supplier Device Package, the device can also be used as Standard Recovery >500ns, > 200mA (Io) Speed. In addition, the Diode Type is Standard, the device is offered in 500nA @ 200V Current Reverse Leakage Vr, the device has a 1.3V @ 3A of Voltage Forward Vf Max If, and Voltage DC Reverse Vr Max is 200V, and the Current Average Rectified Io is 1A, and Reverse Recovery Time trr is 2μs, it has an Operating Temperature Junction range of -65°C ~ 200°C, it has an Maximum Operating Temperature range of + 200 C, it has an Minimum Operating Temperature range of - 65 C, and Vf Forward Voltage is 1.3 V, and the Vr Reverse Voltage is 200 V, and Ir Reverse Current is 500 nA, and the If Forward Current is 1 A, and Max Surge Current is 30 A, and the Recovery Time is 2 us.

The JANTX1N5614 is DIODE GEN PURP 200V 1A AXIAL, that includes 1A Current Average Rectified Io, they are designed to operate with a 500nA @ 200V Current Reverse Leakage Vr, Diode Type is shown on datasheet note for use in a Standard, that offers Mounting Type features such as Through Hole, Mounting Style is designed to work in Through Hole, it has an Operating Temperature Junction range of -65°C ~ 200°C, the device can also be used as A, Axial Package Case. In addition, the Packaging is Bulk, the device is offered in 2μs Reverse Recovery Time trr, the device has a Military, MIL-PRF-19500/427 of Series, and Speed is Standard Recovery >500ns, > 200mA (Io), and the Voltage DC Reverse Vr Max is 200V, and Voltage Forward Vf Max If is 1.3V @ 3A.

Features