Microsemi JANTX2N6059

NPN - Дарлингтон12 A100 V

Overview

The JANTX2N6058 is TRANS NPN DARL 80V 12A TO-3, that includes Military, MIL-PRF-19500/502 Series, they are designed to operate with a Bulk Packaging, Package Case is shown on datasheet note for use in a TO-204AA, TO-3, that offers Mounting Type features such as Through Hole, Supplier Device Package is designed to work in TO-3, as well as the 150W Power Max, the device can also be used as NPN - Darlington Transistor Type. In addition, the Current Collector Ic Max is 12A, the device is offered in 80V Voltage Collector Emitter Breakdown Max, the device has a 1000 @ 6A, 3V of DC Current Gain hFE Min Ic Vce, and Vce Saturation Max Ib Ic is 3V @ 120mA, 12A, and the Current Collector Cutoff Max is 1mA.

The Jantx2N6059 is Darlington Transistors NPN Darlington Transistor manufactured by Microsemi. The Jantx2N6059 is available in TO-3 Package, is part of the Transistors (BJT) - Arrays, , and with support for Darlington Transistors NPN Darlington Transistor, Bipolar (BJT) Transistor NPN - Darlington 100V 12A 150W Through Hole TO-204AA (TO-3), Trans Darlington NPN 100V 12A 150000mW 3-Pin(2+Tab) TO-3.

Features

Bulk Package
the DC current gain for this device is 1000 @ 6A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V

Through Hole Mounting Type

Applications

There are a lot of Microsemi Corporation
JANTX2N6059 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting