Microsemi MSDT150-16

1,6 кВ150 A

Overview

The SDT12S60 is DIODE SCHOTTKY 600V 12A TO220-2, that includes thinQ!? Series, they are designed to operate with a Tube Packaging, Package Case is shown on datasheet note for use in a TO-220-2, that offers Mounting Type features such as Through Hole, Supplier Device Package is designed to work in PG-TO220-2, as well as the No Recovery Time > 500mA (Io) Speed, the device can also be used as Silicon Carbide Schottky Diode Type. In addition, the Current Reverse Leakage Vr is 400μA @ 600V, the device is offered in 1.7V @ 12A Voltage Forward Vf Max If, the device has a 600V of Voltage DC Reverse Vr Max, and Current Average Rectified Io is 12A (DC), and the Reverse Recovery Time trr is 0ns, and Capacitance Vr F is 450pF @ 1V, 1MHz, it has an Operating Temperature Junction range of -55°C ~ 175°C.

SDT12SF with EDA / CAD Models manufactured by AUK. The SDT12SF is available in SOT23 Package, is part of the IC Chips.

Features

Bulk Package
1 SCR, 6 Diodes Number of SCRs, Diodes
1.6 kV Voltage - Off State
150 A Current - On State (It (AV)) (Max)
3 V Voltage - Gate Trigger (Vgt) (Max)
150 mA Current - Gate Trigger (Igt) (Max)
1500A @ 50Hz Current - Non Rep. Surge 50, 60Hz (Itsm)
Chassis Mount Mounting Type
M5 Module Package / Case