Microsemi UES1302

Стандарт100 V6A

Overview

The UES1103SM is DIODE GEN PURP 150V 2.5A A-MELF, that includes Bulk Packaging, they are designed to operate with a Through Hole Mounting Style, Package Case is shown on datasheet note for use in a SQ-MELF, A, that offers Mounting Type features such as Surface Mount, Supplier Device Package is designed to work in A-MELF, as well as the Fast Recovery = 200mA (Io) Speed, the device can also be used as Standard Diode Type. In addition, the Current Reverse Leakage Vr is 2μA @ 150V, the device is offered in 975mV @ 2A Voltage Forward Vf Max If, the device has a 150V of Voltage DC Reverse Vr Max, and Current Average Rectified Io is 2.5A, and the Reverse Recovery Time trr is 25ns, it has an Operating Temperature Junction range of 175°C (Max).

The UES1106 is DIODE GEN PURP 400V 1A AXIAL, that includes 1A Current Average Rectified Io, they are designed to operate with a 10μA @ 400V Current Reverse Leakage Vr, Diode Type is shown on datasheet note for use in a Standard, that offers Mounting Type features such as Through Hole, it has an Operating Temperature Junction range of -55°C ~ 150°C, as well as the A, Axial Package Case, the device can also be used as Bulk Packaging. In addition, the Reverse Recovery Time trr is 50ns, the device is offered in Fast Recovery = 200mA (Io) Speed, the device has a 400V of Voltage DC Reverse Vr Max, and Voltage Forward Vf Max If is 1.25V @ 1A.

Features

Applications

• DC motor control and drives
• Battery chargers
• Welders
• Power converters
• Reverse Polarity Protection
• Ultra High-Speed Switching
• Freewheeling
• Polarity Protection Diode
• Recirculating Diode
• Switching Diode