ON 2N5638

30 V30 ОмК-226-3, К-92-3 (К-226АА)

Overview

The 2N5629 is Bipolar Transistors - BJT NPN High Pwr, that includes 2N5629 Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 0.225789 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-3, as well as the 200 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 200 C, it has an Minimum Operating Temperature range of - 60 C, the device is offered in 100 V Collector Emitter Voltage VCEO Max, the device has a NPN of Transistor Polarity, and Collector Emitter Saturation Voltage is 2 V, and the Collector Base Voltage VCBO is 100 V, and Emitter Base Voltage VEBO is 7 V, and the Maximum DC Collector Current is 16 A, and Gain Bandwidth Product fT is 1 MHz, and the Continuous Collector Current is 0.45 A, and DC Collector Base Gain hfe Min is 4 at 16 A 2 V.

The 2N5631 is Trans GP BJT NPN 140V 16A 200000mW 3-Pin(2+Tab) TO-204AA Tray manufactured by MOT. The 2N5631 is available in TO-3 Package, is part of the IC Chips, , and with support for Trans GP BJT NPN 140V 16A 200000mW 3-Pin(2+Tab) TO-204AA Tray.

Features

• Pb?Free Packages are Available

• Low Drain?Source "ON" Resistance: RDS(on) = 30 for 2N5638

• Low Reverse Transfer Capacitance ? Crss: 4.0 pF (Max) @ f = 1.0 MHz

• High Current Gain

• Fast Switching Characteristics ? tr: 5.0 ns (Max)

Applications

• Class-D Amplifiers

• DC Torque Motors

• Switched-Capacitor Filters

• DC/DC Converters

• DC Motor Speed Controllers