ON 2N5962

NPN100 мА45 V

Overview

The 2N5961 is TRANS NPN 60V 0.1A TO-92, that includes 2N5961 Series, they are designed to operate with a Bulk Packaging, Part Aliases is shown on datasheet note for use in a BK, that offers Unit Weight features such as 0.016000 oz, Mounting Style is designed to work in Through Hole, as well as the TO-92 Package Case, the device can also be used as Single Configuration. In addition, the Pd Power Dissipation is 625 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 65 C, and Collector Emitter Voltage VCEO Max is 60 V, and the Transistor Polarity is NPN, and Collector Emitter Saturation Voltage is 0.2 V, and the Collector Base Voltage VCBO is 60 V, and Emitter Base Voltage VEBO is 8 V, and the Maximum DC Collector Current is 0.05 A, and Gain Bandwidth Product fT is 100 MHz, and the Continuous Collector Current is 0.1 A, and DC Collector Base Gain hfe Min is 100.

The 2N5956 is Bipolar Transistors - BJT PNP Transistor manufactured by Microsemi. The 2N5956 is available in TO-66 Package, is part of the Transistors - Bipolar (BJT) - RF, , and with support for Bipolar Transistors - BJT PNP Transistor, Bipolar (BJT) Transistor.

Features

Bulk Package
the DC current gain for this device is 600 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 500μA, 10mA
the emitter base voltage is kept at 8V
the current rating of this device is 100mA

Through Hole Mounting Type

Applications

There are a lot of ON Semiconductor
2N5962 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting