ON 2N6287

PNP - Дарлингтон20 A100 V

Overview

The 2N6286G is TRANS PNP DARL 80V 20A TO-3, that includes 2N6286 Series, they are designed to operate with a Tray Packaging, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-204AA, TO-3, Mounting Type is designed to work in Through Hole, as well as the TO-3 Supplier Device Package, the device can also be used as Single Configuration. In addition, the Power Max is 160W, the device is offered in PNP - Darlington Transistor Type, the device has a 20A of Current Collector Ic Max, and Voltage Collector Emitter Breakdown Max is 80V, and the DC Current Gain hFE Min Ic Vce is 750 @ 10A, 3V, and Vce Saturation Max Ib Ic is 3V @ 200mA, 20A, and the Current Collector Cutoff Max is 1mA, and Pd Power Dissipation is 160 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 65 C, and the Collector Emitter Voltage VCEO Max is 80 V, and Transistor Polarity is PNP, and the Collector Base Voltage VCBO is 80 V, and Emitter Base Voltage VEBO is 5 V, and the Maximum DC Collector Current is 20 A, and Continuous Collector Current is 20 A, and the DC Collector Base Gain hfe Min is 100 750, and Maximum Collector Cut off Current is 500 uA.

The 2N6286 is Darlington Transistors PNP Darlington Transistor manufactured by Microsemi. The 2N6286 is available in TO-3 Package, is part of the Transistors (BJT) - Arrays, , and with support for Darlington Transistors PNP Darlington Transistor, Bipolar (BJT) Transistor.

Features

Integrated collector-emitter antiparallel diode

High Current Gains: hFE = 4000 (Typ)

High DC Current Gain @ IC = 10 Adc

Pb-Free Packages are Available

Monolithic Construction with Built-In Base-Emitter Shunt Resistors

Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min)

Applications

Touch and Light Sensors

Display Drivers

Switching Applications

Power Regulators

Audio Amplifiers

Solenoid Control

DC-AC converters