ON 2SK3092-TL-E

Overview

2SK3079ATE12LQ with pin details, that includes RF Power MOSFET Type, they are designed to operate with a Reel Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as PW-X-4, Technology is designed to work in Si, as well as the 13.5 dB Gain, the device can also be used as 2.2 W Output Power. In addition, the Pd Power Dissipation is 20 W, the device is offered in 470 MHz Operating Frequency, the device has a 3 V of Vgs Gate Source Voltage, and Id Continuous Drain Current is 3 A, and the Vds Drain Source Breakdown Voltage is 10 V, and Vgs th Gate Source Threshold Voltage is 0.8 V, and the Transistor Polarity is N-Channel.

2SK3084 with EDA / CAD Models manufactured by TOSHIBA. The 2SK3084 is available in SOT-263 Package, is part of the IC Chips.

Features