ON BS108G

N-канальный200 V250 мА (Ta)1,5 В @ 1 мА350 мВт (Ta)-55°C ~ 150°C (TJ)Сквозное отверстие

Overview

The BS107P is MOSFET N-Chnl 200V, that includes BS107 Series, they are designed to operate with a Bulk Packaging, Unit Weight is shown on datasheet note for use in a 0.016000 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-92-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 500 mW of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 120 mA, and Vds Drain Source Breakdown Voltage is 200 V, and the Rds On Drain Source Resistance is 15 Ohms, and Transistor Polarity is N-Channel, and the Channel Mode is Enhancement.

BS108 with EDA / CAD Models manufactured by ON. The BS108 is available in TO-92 Package, is part of the IC Chips.

Features

• Low Drive Requirement, VGS = 3.0 V max

• Inherent Current Sharing Capability Permits Easy Paralleling of many Devices

• AEC Qualified

• PPAP Capable

• This is a Pb?Free Device*

Applications

• High voltage, high-speed switching applications