ON BSS138LT7G

N-канальный50 V200 мА (Ta)1,5 В @ 1 мА225 мВт (Ta)-55°C ~ 150°C (TJ)Поверхностный монтаж

Overview

The BSS138LT3G is MOSFET N-CH 50V 200MA SOT-23, that includes BSS138L Series, they are designed to operate with a Reel Packaging, Unit Weight is shown on datasheet note for use in a 0.050717 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in SOT-23-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 225 mW of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 200 mA, and Vds Drain Source Breakdown Voltage is 50 V, and the Rds On Drain Source Resistance is 3.5 Ohms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 20 ns, and Typical Turn On Delay Time is 20 ns, and the Forward Transconductance Min is 0.1 S, and Channel Mode is Enhancement.

The BSS138LT3 is MOSFET N-CH 50V 200MA SOT-23 manufactured by ON. The BSS138LT3 is available in TO-236-3, SC-59, SOT-23-3 Package, is part of the FETs - Single, , and with support for MOSFET N-CH 50V 200MA SOT-23, Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
50 V Drain to Source Voltage (Vdss)
200mA (Ta) Current - Continuous Drain (Id) @ 25°C
2.75V, 5V Drive Voltage (Max Rds On, Min Rds On)
3.5Ohm @ 200mA, 5V Rds On (Max) @ Id, Vgs
1.5V @ 1mA Vgs(th) (Max) @ Id
±20V Vgs (Max)
50 pF @ 25 V Input Capacitance (Ciss) (Max) @ Vds
225mW (Ta) Power Dissipation (Max)
Surface Mount Mounting Type