ON ECH8601M-TL-H

MOSFET (оксид металла)Затвор логического уровня, преобразователь 2,5 В2 N-канальный (сдвоенный) общий сток24V8A (Ta)23 мОм @ 4 А, 4,5 В1,3 В @ 1 мА

Overview

The ECH8502-TL-H is TRANS NPN/PNP 100V/50V 5A 8ECH, that includes ECH8502 Series, they are designed to operate with a Tape & Reel (TR) Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as 8-SMD, Flat Lead, Mounting Type is designed to work in Surface Mount, as well as the 8-ECH Supplier Device Package, the device can also be used as 1.6W Power Max. In addition, the Transistor Type is NPN, PNP, the device is offered in 5A Current Collector Ic Max, the device has a 100V, 50V of Voltage Collector Emitter Breakdown Max, and DC Current Gain hFE Min Ic Vce is 200 @ 500mA, 2V, and the Vce Saturation Max Ib Ic is 120mV @ 125mA, 2.5A, and Current Collector Cutoff Max is 100nA (ICBO), and the Frequency Transition is 290MHz, and Pd Power Dissipation is 1.3 W, and the Collector Emitter Voltage VCEO Max is 50 V, and Transistor Polarity is NPN PNP, and the Emitter Base Voltage VEBO is 6 V, and Continuous Collector Current is 5 A, and the DC Collector Base Gain hfe Min is 200.

ECH8601 with circuit diagram manufactured by SANYO. The ECH8601 is available in TSSP-8 Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate, 2.5V Drive FET Feature
24V Drain to Source Voltage (Vdss)
8A (Ta) Current - Continuous Drain (Id) @ 25°C
23mOhm @ 4A, 4.5V Rds On (Max) @ Id, Vgs
1.3V @ 1mA Vgs(th) (Max) @ Id
7.5nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
150°C (TJ) Operating Temperature
Surface Mount Mounting Type