ON ECH8651R-TL-HX

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)24V10A14 мОм @ 5 А, 4,5 В

Overview

The ECH8651R-TL-H is MOSFET 2N-CH 24V 10A ECH8, that includes ECH8651R Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as 8-SMD, Flat Lead, Technology is designed to work in Si, it has an Operating Temperature range of 150°C (TJ), the device can also be used as Surface Mount Mounting Type. In addition, the Number of Channels is 2 Channel, the device is offered in 8-ECH Supplier Device Package, the device has a Dual of Configuration, and FET Type is 2 N-Channel (Dual), and the Power Max is 1.5W, and Transistor Type is 2 N-Channel, and the Drain to Source Voltage Vdss is 24V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 10A, and Rds On Max Id Vgs is 14 mOhm @ 5A, 4.5V, and the Gate Charge Qg Vgs is 24nC @ 10V, and Pd Power Dissipation is 1.4 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Vgs Gate Source Voltage is 12 V, and Id Continuous Drain Current is 10 A, and the Vds Drain Source Breakdown Voltage is 24 V, and Rds On Drain Source Resistance is 14 mOhms, and the Transistor Polarity is N-Channel.

The ECH8649-TL-H is MOSFET 2N-CH 20V 7.5A ECH8, that includes 7.5A Current Continuous Drain Id 25°C, they are designed to operate with a 20V Drain to Source Voltage Vdss, FET Feature is shown on datasheet note for use in a Logic Level Gate, that offers FET Type features such as 2 N-Channel (Dual), Gate Charge Qg Vgs is designed to work in 10.8nC @ 4.5V, as well as the 1060pF @ 10V Input Capacitance Ciss Vds, the device can also be used as Surface Mount Mounting Type, it has an Operating Temperature range of 150°C (TJ), the device is offered in 8-SMD, Flat Lead Package Case, the device has a Tape & Reel (TR) of Packaging, and Power Max is 1.5W, and the Rds On Max Id Vgs is 17 mOhm @ 4A, 4.5V, and Supplier Device Package is 8-ECH.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
24V Drain to Source Voltage (Vdss)
10A Current - Continuous Drain (Id) @ 25°C
14mOhm @ 5A, 4.5V Rds On (Max) @ Id, Vgs
24nC @ 10V Gate Charge (Qg) (Max) @ Vgs
1.5W Power - Max
150°C (TJ) Operating Temperature
Surface Mount Mounting Type