ON ECH8652-TL-H

MOSFET (оксид металла)Затвор логического уровня2 P-канала (сдвоенные)12V6A28 мОм @ 3 А, 4,5 В

Overview

The ECH8651R-TL-HX is MOSFET 2N-CH 24V 10A ECH8, that includes ECH8651R Series, they are designed to operate with a Tape & Reel (TR) Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as 8-SMD, Flat Lead, Technology is designed to work in Si, it has an Operating Temperature range of 150°C (TJ), the device can also be used as Surface Mount Mounting Type. In addition, the Number of Channels is 2 Channel, the device is offered in 8-ECH Supplier Device Package, the device has a 2 N-Channel (Dual) of FET Type, and Power Max is 1.5W, and the Transistor Type is 2 N-Channel, and Drain to Source Voltage Vdss is 24V, and the FET Feature is Logic Level Gate, and Current Continuous Drain Id 25°C is 10A, and the Rds On Max Id Vgs is 14 mOhm @ 5A, 4.5V, and Gate Charge Qg Vgs is 24nC @ 10V, and the Pd Power Dissipation is 1.4 W, and Id Continuous Drain Current is 10 A, and the Vds Drain Source Breakdown Voltage is 24 V, and Rds On Drain Source Resistance is 14 mOhms, and the Transistor Polarity is N-Channel.

ECH8652-S-TL-H with circuit diagram manufactured by SANYO. The ECH8652-S-TL-H is available in ECH8 Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
12V Drain to Source Voltage (Vdss)
6A Current - Continuous Drain (Id) @ 25°C
28mOhm @ 3A, 4.5V Rds On (Max) @ Id, Vgs
11nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
1000pF @ 6V Input Capacitance (Ciss) (Max) @ Vds
1.5W Power - Max
150°C (TJ) Operating Temperature
Surface Mount Mounting Type