ON ECH8662-TL-H

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)40V6.5A30 мОм @ 3,5 А, 4,5 В

Overview

The ECH8661-TL-H is MOSFET N/P-CH 30V 7A/5.5A ECH8, that includes ECH8661 Series, they are designed to operate with a Tape & Reel (TR) Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as 8-SMD, Flat Lead, Technology is designed to work in Si, it has an Operating Temperature range of 150°C (TJ), the device can also be used as Surface Mount Mounting Type. In addition, the Number of Channels is 2 Channel, the device is offered in 8-ECH Supplier Device Package, the device has a 1 N-Channel 1 P-Channel of Configuration, and FET Type is N and P-Channel, and the Power Max is 1.5W, and Transistor Type is 1 N-Channel 1 P-Channel, and the Drain to Source Voltage Vdss is 30V, and Input Capacitance Ciss Vds is 710pF @ 10V, and the FET Feature is Logic Level Gate, and Current Continuous Drain Id 25°C is 7A, 5.5A, and the Rds On Max Id Vgs is 24 mOhm @ 3.5A, 10V, and Gate Charge Qg Vgs is 11.8nC @ 10V, and the Pd Power Dissipation is 1.3 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 25 ns 42 ns, and the Rise Time is 25 ns 23 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 7 A, and Vds Drain Source Breakdown Voltage is 30 V, and the Rds On Drain Source Resistance is 24 mOhms, and Transistor Polarity is N-Channel P-Channel, and the Typical Turn Off Delay Time is 43 ns 63 ns, and Typical Turn On Delay Time is 10 ns 7.2 ns, and the Qg Gate Charge is 11.8 nC 13 nC, and Forward Transconductance Min is 3.7 S 5.2 S.

ECH8660-S-TL-H with circuit diagram, that includes 4.5 A 4.5 A Id Continuous Drain Current, they are designed to operate with a Surface Mount Mounting Type, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Number of Channels features such as 2 Channel, Package Case is designed to work in 8-SMD, Flat Lead, as well as the Tape & Reel (TR) Packaging, the device can also be used as 59 mOhms 59 mOhms Rds On Drain Source Resistance. In addition, the Series is ECH8660-S-TL-H, the device is offered in 8-ECH Supplier Device Package, the device has a Si of Technology, and Transistor Polarity is N-Channel P-Channel, and the Transistor Type is 1 N-Channel 1 P-Channel, and Vds Drain Source Breakdown Voltage is 30 V.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
40V Drain to Source Voltage (Vdss)
6.5A Current - Continuous Drain (Id) @ 25°C
30mOhm @ 3.5A, 4.5V Rds On (Max) @ Id, Vgs
12nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
1130pF @ 20V Input Capacitance (Ciss) (Max) @ Vds
1.5W Power - Max
150°C (TJ) Operating Temperature
Surface Mount Mounting Type