ON ECH8664R-TL-H

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)30V7A23,5 мОм @ 3,5 А, 4,5 В

Overview

The ECH8661-TL-H is MOSFET N/P-CH 30V 7A/5.5A ECH8, that includes ECH8661 Series, they are designed to operate with a Tape & Reel (TR) Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as 8-SMD, Flat Lead, Technology is designed to work in Si, it has an Operating Temperature range of 150°C (TJ), the device can also be used as Surface Mount Mounting Type. In addition, the Number of Channels is 2 Channel, the device is offered in 8-ECH Supplier Device Package, the device has a 1 N-Channel 1 P-Channel of Configuration, and FET Type is N and P-Channel, and the Power Max is 1.5W, and Transistor Type is 1 N-Channel 1 P-Channel, and the Drain to Source Voltage Vdss is 30V, and Input Capacitance Ciss Vds is 710pF @ 10V, and the FET Feature is Logic Level Gate, and Current Continuous Drain Id 25°C is 7A, 5.5A, and the Rds On Max Id Vgs is 24 mOhm @ 3.5A, 10V, and Gate Charge Qg Vgs is 11.8nC @ 10V, and the Pd Power Dissipation is 1.3 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 25 ns 42 ns, and the Rise Time is 25 ns 23 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 7 A, and Vds Drain Source Breakdown Voltage is 30 V, and the Rds On Drain Source Resistance is 24 mOhms, and Transistor Polarity is N-Channel P-Channel, and the Typical Turn Off Delay Time is 43 ns 63 ns, and Typical Turn On Delay Time is 10 ns 7.2 ns, and the Qg Gate Charge is 11.8 nC 13 nC, and Forward Transconductance Min is 3.7 S 5.2 S.

The ECH8662-TL-H is MOSFET 2N-CH 40V 6.5A ECH8, that includes 6.5A Current Continuous Drain Id 25°C, they are designed to operate with a 40V Drain to Source Voltage Vdss, FET Feature is shown on datasheet note for use in a Logic Level Gate, that offers FET Type features such as 2 N-Channel (Dual), Gate Charge Qg Vgs is designed to work in 12nC @ 4.5V, as well as the 6.5 A Id Continuous Drain Current, the device can also be used as 1130pF @ 20V Input Capacitance Ciss Vds. In addition, the Mounting Type is Surface Mount, the device is offered in SMD/SMT Mounting Style, it has an Operating Temperature range of 150°C (TJ), and Package Case is 8-SMD, Flat Lead, and the Packaging is Tape & Reel (TR), and Power Max is 1.5W, and the Rds On Drain Source Resistance is 30 mOhms, and Rds On Max Id Vgs is 30 mOhm @ 3.5A, 4.5V, and the Series is ECH8662, and Supplier Device Package is 8-ECH, and the Technology is Si, and Transistor Polarity is N-Channel, and the Vds Drain Source Breakdown Voltage is 40 V.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
30V Drain to Source Voltage (Vdss)
7A Current - Continuous Drain (Id) @ 25°C
23.5mOhm @ 3.5A, 4.5V Rds On (Max) @ Id, Vgs
10nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
1.4W Power - Max
150°C (TJ) Operating Temperature
Surface Mount Mounting Type