ON ECH8668-TL-H

MOSFET (оксид металла)Затвор логического уровняN- и P-каналы20V7,5A, 5A17 мОм @ 4 А, 4,5 В

Overview

The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
7.5A, 5A Current - Continuous Drain (Id) @ 25°C
17mOhm @ 4A, 4.5V Rds On (Max) @ Id, Vgs
10.8nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
1060pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
1.5W Power - Max
150°C (TJ) Operating Temperature
Surface Mount Mounting Type