ON EFC6602R-A-TR

MOSFET (оксид металла)Затвор логического уровня, преобразователь 2,5 В2 N-канальный (сдвоенный) общий сток

Overview

The EFC6601R-TR is MOSFET 2N-CH EFCP, that includes EFC6601R Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.002413 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 6-XFBGA, as well as the Si Technology, it has an Operating Temperature range of 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 6-EFCP (2.7x1.81) Supplier Device Package, the device has a 2 N-Channel (Dual) of FET Type, and Power Max is 2W, and the FET Feature is Logic Level Gate, 2.5V Drive, and Gate Charge Qg Vgs is 48nC @ 4.5V, and the Id Continuous Drain Current is 13 A, and Vds Drain Source Breakdown Voltage is 24 V, and the Rds On Drain Source Resistance is 11.5 mOhms, and Transistor Polarity is N-Channel.

EFC4627R-TR with circuit diagram, that includes Logic Level Gate, 2.5V Drive FET Feature, they are designed to operate with a 2 N-Channel (Dual) Common Drain FET Type, Gate Charge Qg Vgs is shown on datasheet note for use in a 13.4nC @ 4.5V, it has an Operating Temperature range of 150°C (TJ), Package Case is designed to work in 4-XFBGA, FCBGA, as well as the Tape & Reel (TR) Packaging, the device can also be used as 1.4W Power Max. In addition, the Supplier Device Package is 4-EFCP (1.01x1.01), the device is offered in Si Technology.

Features