ON EFC6611R-TF

MOSFET (оксид металла)Затвор логического уровня, преобразователь 2,5 В2 N-канальный (сдвоенный) общий сток

Overview

EFC6605R-TR with pin details, that includes EFC6605R Series, they are designed to operate with a Tape & Reel (TR) Packaging, Unit Weight is shown on datasheet note for use in a 0.002328 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 6-XFBGA, as well as the Si Technology, it has an Operating Temperature range of 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 2 Channel Number of Channels, the device has a 6-EFCP (1.9x1.46) of Supplier Device Package, and Configuration is Dual Common Drain, and the FET Type is 2 N-Channel (Dual), and Power Max is 1.6W, and the Transistor Type is 2 N-Channel, and FET Feature is Logic Level Gate, 2.5V Drive, and the Gate Charge Qg Vgs is 19.8nC @ 4.5V, and Pd Power Dissipation is 1.6 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 60800 ns, and Rise Time is 678 ns, and the Vgs Gate Source Voltage is 10 V, and Id Continuous Drain Current is 10 A, and the Vds Drain Source Breakdown Voltage is 20 V, and Vgs th Gate Source Threshold Voltage is 500 mV to 1.3 V, and the Rds On Drain Source Resistance is 13.3 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 44400 ns, and Typical Turn On Delay Time is 154 ns, and the Qg Gate Charge is 19.8 nC.

The EFC6605R-V-TR is MOSFET N-CH DUAL 10A 24V 6XFLGA, that includes Si Technology.

Features