ON EMH2314-TL-H

MOSFET (оксид металла)Затвор логического уровня2 P-канала (сдвоенные)12V5A37 мОм @ 2,5 А, 4,5 В

Overview

EMH2308-TL-H with pin details, that includes Tape & Reel (TR) Packaging, they are designed to operate with a 8-SMD, Flat Lead Package Case, Technology is shown on datasheet note for use in a Si, it has an Operating Temperature range of 150°C (TJ), Mounting Type is designed to work in Surface Mount, as well as the 1 Channel Number of Channels, the device can also be used as 8-EMH Supplier Device Package. In addition, the FET Type is 2 P-Channel (Dual), the device is offered in 1W Power Max, the device has a 1 P-Channel of Transistor Type, and Drain to Source Voltage Vdss is 20V, and the Input Capacitance Ciss Vds is 320pF @ 10V, and FET Feature is Logic Level Gate, 1.8V Drive, and the Current Continuous Drain Id 25°C is 3A, and Rds On Max Id Vgs is 85 mOhm @ 3A, 4.5V, and the Gate Charge Qg Vgs is 4nC @ 4.5V, and Transistor Polarity is P-Channel.

The EMH2308-TL-E is Trans MOSFET P-CH Si 20V 3A 8-Pin Sot-383FL T/R manufactured by SANYO. The EMH2308-TL-E is available in SOT363 Package, is part of the IC Chips, , and with support for Trans MOSFET P-CH Si 20V 3A 8-Pin Sot-383FL T/R.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
12V Drain to Source Voltage (Vdss)
5A Current - Continuous Drain (Id) @ 25°C
37mOhm @ 2.5A, 4.5V Rds On (Max) @ Id, Vgs
12nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
1300pF @ 6V Input Capacitance (Ciss) (Max) @ Vds
1.2W Power - Max
150°C (TJ) Operating Temperature
Surface Mount Mounting Type